Thermoelectric efficiency in graded indium-doped PbTe crystals
Identifieur interne : 000728 ( Russie/Analysis ); précédent : 000727; suivant : 000729Thermoelectric efficiency in graded indium-doped PbTe crystals
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Abstract
High efficiency thermoelectric conversion is achieved by using materials with a maximum figure of merit Z=S2σ/k, where S is the Seebeck coefficient, σ and k, the electrical and thermal conductivities, respectively. High quality homogeneous thermoelectric materials, based on PbTe crystals, usually display an elevated value of Z over a narrow temperature range. A maximal value of figure of merit Z, as a function of electron density, is attained only for one specific location of the Fermi level, EF, with respect to the conduction band edge, EC. In order to maintain this optimal Z value, namely, maintain a constant location of the Fermi level, the electron density, which is determined by the dopant concentration, must increase with increasing temperature. We present a method for the generation of a dopant (indium) concentration profile in n-type PbTe crystals that gives rise to a constant location of the Fermi level, and hence, to an optimal value of Z over a wide temperature range. The resulting functionally graded material, based on PbTeIn, displays a practically constant value of the Seebeck coefficient, over the 50-600°C temperature range. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Thermoelectric efficiency in graded indium-doped PbTe crystals</title><author><name sortKey="Dashevsky, Z" uniqKey="Dashevsky Z">Z. Dashevsky</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Israël</country><wicri:regionArea>Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105</wicri:regionArea><wicri:noRegion>Beer-Sheva 84105</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Chemical Problems for Microelectronics, Moscow 109017, Russia</s1></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Institute of Chemical Problems for Microelectronics, Moscow 109017</wicri:regionArea><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Shusterman, S" uniqKey="Shusterman S">S. Shusterman</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Israël</country><wicri:regionArea>Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105</wicri:regionArea><wicri:noRegion>Beer-Sheva 84105</wicri:noRegion></affiliation></author><author><name sortKey="Dariel, M P" uniqKey="Dariel M">M. P. Dariel</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Israël</country><wicri:regionArea>Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105</wicri:regionArea><wicri:noRegion>Beer-Sheva 84105</wicri:noRegion></affiliation></author><author><name sortKey="Drabkin, I" uniqKey="Drabkin I">I. Drabkin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Israël</country><wicri:regionArea>Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105</wicri:regionArea><wicri:noRegion>Beer-Sheva 84105</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0384420</idno><date when="2002-08-01">2002-08-01</date><idno type="stanalyst">PASCAL 02-0384420 AIP</idno><idno type="RBID">Pascal:02-0384420</idno><idno type="wicri:Area/Main/Corpus">00EE60</idno><idno type="wicri:Area/Main/Repository">00DF69</idno><idno type="wicri:Area/Russie/Extraction">000728</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Conduction bands</term><term>Electron density</term><term>Experimental study</term><term>Fermi level</term><term>IV-VI semiconductors</term><term>Indium</term><term>Lead compounds</term><term>Seebeck effect</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7220P</term><term>7280J</term><term>7220J</term><term>7120N</term><term>Etude expérimentale</term><term>Plomb composé</term><term>Semiconducteur IV-VI</term><term>Indium</term><term>Effet Seebeck</term><term>Densité électron</term><term>Niveau Fermi</term><term>Bande conduction</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">High efficiency thermoelectric conversion is achieved by using materials with a maximum figure of merit Z=S<sup>2</sup>σ/k, where S is the Seebeck coefficient, σ and k, the electrical and thermal conductivities, respectively. High quality homogeneous thermoelectric materials, based on PbTe crystals, usually display an elevated value of Z over a narrow temperature range. A maximal value of figure of merit Z, as a function of electron density, is attained only for one specific location of the Fermi level, E<sub>F</sub>, with respect to the conduction band edge, E<sub>C</sub>. In order to maintain this optimal Z value, namely, maintain a constant location of the Fermi level, the electron density, which is determined by the dopant concentration, must increase with increasing temperature. We present a method for the generation of a dopant (indium) concentration profile in n-type PbTe crystals that gives rise to a constant location of the Fermi level, and hence, to an optimal value of Z over a wide temperature range. The resulting functionally graded material, based on PbTeIn, displays a practically constant value of the Seebeck coefficient, over the 50-600°C temperature range. © 2002 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>92</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Thermoelectric efficiency in graded indium-doped PbTe crystals</s1></fA08><fA11 i1="01" i2="1"><s1>DASHEVSKY (Z.)</s1></fA11><fA11 i1="02" i2="1"><s1>SHUSTERMAN (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>DARIEL (M. P.)</s1></fA11><fA11 i1="04" i2="1"><s1>DRABKIN (I.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Chemical Problems for Microelectronics, Moscow 109017, Russia</s1></fA14><fA20><s1>1425-1430</s1></fA20><fA21><s1>2002-08-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0384420</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>High efficiency thermoelectric conversion is achieved by using materials with a maximum figure of merit Z=S<sup>2</sup>σ/k, where S is the Seebeck coefficient, σ and k, the electrical and thermal conductivities, respectively. High quality homogeneous thermoelectric materials, based on PbTe crystals, usually display an elevated value of Z over a narrow temperature range. A maximal value of figure of merit Z, as a function of electron density, is attained only for one specific location of the Fermi level, E<sub>F</sub>, with respect to the conduction band edge, E<sub>C</sub>. In order to maintain this optimal Z value, namely, maintain a constant location of the Fermi level, the electron density, which is determined by the dopant concentration, must increase with increasing temperature. We present a method for the generation of a dopant (indium) concentration profile in n-type PbTe crystals that gives rise to a constant location of the Fermi level, and hence, to an optimal value of Z over a wide temperature range. 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